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The 11-nanometer DRAM currently under development will achieve the industrys highest level of memory density, said Lee Jung-bae.
President of Samsungs rig Solutions Division.
In the coming era of below-10nm DRAM and 1,000-layer V-NAND, innovation in new structures and materials is crucial.
And earlier this year, it said itwanted to launch a 1PB SSD within ten years.
But there are suggestions this timescale is being dramatically slashed.
Samsung will continue to push its cutting-edge manufacturing processes to achieve increasingly higher storage density.
